IRLR2905TRPBF

power MOSFET, TO252, 42A, ± 16 V, 11 mJ, IRLR2905TRPBF, International Rectifier

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PartNumber:: IRLR2905TRPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

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Products Upload time: 2012-07-24

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Product Summary

The IRLR2905TRPBF is a power MOSFET from International Rectifier. The IRLR2905TRPBF utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

Parametrics

IRLR2905TRPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 42A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 30 A; (3)IDM Pulsed Drain Current: 160A; (4)PD @TC = 25℃ Power Dissipation: 110 W; (5)Linear Derating Factor: 0.71 W/℃; (6)VGS Gate-to-Source Voltage: ± 16 V; (7)EAS Single Pulse Avalanche Energy: 210 mJ; (8)IAR Avalanche Current: 25 A; (9)EAR Repetitive Avalanche Energy: 11 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ, TSTG: Operating Junction and Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300℃ (1.6mm from case ).

Features

IRLR2905TRPBF features: (1)Logic-Level Gate Drive; (2)Ultra Low On-Resistance; (3)Surface Mount (IRLR2905); (4)Straight Lead (IRLU2905); (5)Advanced Process Technology; (6)Fast Switching; (7)Fully Avalanche Rated; (8)Lead-Free.