(China (Mainland))
Product Summary
The SST39VF6401-70-4C-EKE is a 64 Mbit Multi-Purpose Flash Plus. It is manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF6401-70-4C-EKE writes (Program or Erase) with a 2.7-3.6V power supply. The SST39VF6401B-70-4I-EKE conforms to JEDEC standard pin assignments for × 16 memories.
Parametrics
SST39VF6401-70-4C-EKE absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (TA = 25℃): 1.0W; (7)Surface Mount Solder Reflow Temperature: 260℃ for 10 seconds; (8)Output Short Circuit Current: 50 mA.
Features
SST39VF6401-70-4C-EKE features: (1)Organized as 4M × 16; (2)Single Voltage Read and Write Operations; (3)Superior Reliability; (4)Low Power Consumption (typical values at 5 MHz); (5)Hardware Block-Protection/WP# Input Pin; (6)Sector-Erase Capability; (7)Block-Erase Capability; (8)Chip-Erase Capability; (9)Erase-Suspend/Erase-Resume Capabilities; (10)Hardware Reset Pin (RST#); (11)Security-ID Feature.
Diagrams
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 SST308 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST308-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST308-T1 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST308-T1-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST309 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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SST309-E3 |
Vishay/Siliconix |
JFET 35V 12mA |
Data Sheet |
Negotiable |
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