Product Summary

The SPD04N60C3 is a power transistor.

Parametrics

SPD04N60C3 absolute maximum ratings: (1)pulsed drain current, ID puls: 13.5mJ; (2)avalanche energy, single pulse, EAS: 130mJ; (3)avalanche energy, EAR: 0.4mJ; (4)avalanche current, repetitive tAR limited by Tjmax, IAR: 4.5A; (5)gate source voltage AC, VGS: ±30V; (6)power dissipation, Ptot: 50W; (7)operating and storage temperature, Tj, Tstg: -55 to 150℃.

Features

SPD04N60C3 features: (1)new revolutionary high voltage technology; (2)ultra low gate charge; (3)periodic avalanche rated; (4)extreme dv/dt rated; (5)high peak current capability; (6)improved transconductance; (7)Pb-free lead plating; RoHS compliant; (8)qualified according to JEDEC for target applicaitons.

Diagrams

SPD04N60C3 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SPD04N60C3
SPD04N60C3
Infineon Technologies
MOSFET COOL MOS N-CH 650V 4.5A
Data Sheet
0-1: $1.04
1-10: $0.82
10-100: $0.70
100-500: $0.61
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(USD)		 Quantity
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Data Sheet
0-1: $0.64
1-10: $0.57
10-100: $0.45
100-500: $0.42
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SPD03N60C3
Infineon Technologies
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Data Sheet
0-1: $0.80
1-25: $0.63
25-100: $0.57
100-250: $0.50
SPD04N60C3
SPD04N60C3
Infineon Technologies
MOSFET COOL MOS N-CH 650V 4.5A
Data Sheet
0-1: $1.04
1-10: $0.82
10-100: $0.70
100-500: $0.61
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0-1: $1.28
1-10: $1.13
10-100: $1.00
100-500: $0.97
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SPD06N60C3
Infineon Technologies
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Data Sheet
0-1: $1.00
1-10: $0.80
10-100: $0.64
100-500: $0.56
SPD04P10PL G
SPD04P10PL G
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Data Sheet
0-1: $0.47
1-10: $0.39
10-100: $0.31
100-500: $0.29