Product Summary

The BTS462T is an N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions, it has a wide application in the following aspect, all types of resistive, inductive and capacitive loads, uC compatible power switch for 12 V and 24 V DC applications, replaces electromechanical relays and discrete circuits.

Parametrics

BTS462T absolute maximum ratings: (1)Supply voltage, Vbb: 40V; (2)Supply voltage for full short circuit protection, Tj = -40 to +150℃, Vbb(SC): 32V; (3)Continuous input voltage, VIN: -10 to +16V; (4)Load current (Short - circuit current), IL: self limited A; (5)Current through input pin (DC), IIN: ±5mA; (6)Operating temperature, Tj: -40 to +150℃; (7)Storage temperature, Tstg: -55 to +150℃; (8)Power dissipation, Ptot: 41.6W; (9)Inductive load switch-off energy dissipation single pulse, Tj=150℃, Vbb=13.5V, IL=1A, EAS: 4.4J; (10)Load dump protection VLoadDump= VA+VS, RI=2Ω, td=400ms, VIN=low or high, VA=13,5V, RL=13.5Ω; (11)VLoaddump: 75V; (12)Electrostatic discharge voltage (Human Body Model) according to ANSI EOS/ESD-S5.1-1993 ESD STM5.1 - 1998, Input pin, VESD: ±1kV; (13)Electrostatic discharge voltage (Human Body Model) according to ANSI EOS/ESD-S5.1-1993 ESD STM5.1-1998, all other pins, VESD: ±5kV; (14)junction - case: RthJC: 3K/W; (15)Thermal resistance at min. footprint, Rth(JA): 80K/W; (16)Thermal resistance at 6 cm2 cooling area, Rth(JA): 45 to 60K/W.

Features

BTS462T features: (1)Overload protection; (2)Current limitation; (3)Short circuit protection; (4)Thermal shutdown with restart; (5)Overvoltage protection (including load dump); (6)Fast demagnetization of inductive loads; (7)Reverse battery protection with external resistor; (8)CMOS compatible input; (9)Loss of GND and loss of Vbb protection; (10)ESD - Protection; (11)Very low standby current.

Diagrams

BTS462T block diagram

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