(China (Mainland))
Product Summary
The K6X4016C3F-TF70 is a CMOS SRAM. It is fabricated by SAMSUNG’s advanced full CMOS process technology. The K6X4016C3F-TF70 supports various operating temperature range and small package types for user flexibility of system design. The K6X4016C3F-TF70 also supports low data retention voltage for battery back-up operation with low data retention current.
Parametrics
K6X4016C3F-TF70 absolute maximum ratings: (1) Voltage on any pin relative to Vss VIN, VOUT: -0.5V to VCC+0.5V (max. 7.0V); (2) Voltage on Vcc supply relative to Vss VCC: -0.3V to 7.0V; (3) Power Dissipation PD: 1.0W; (4) Storage temperature TSTG: -65℃ to 150℃; (5) Operating Temperature TA: -40℃ to 85℃.
Features
K6X4016C3F-TF70 features: (1) Process Technology: Full CMOS; (2) Organization: 256Kx16; (3) Power Supply Voltage: 4.5V to 5.5V; (4) Low Data Retention Voltage: 2V (Min); (5) Three state output and TTL compatible; (6) Package Type: 44-TSOP2-400F.
Diagrams
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K6X4008C1F-B |
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K6X4008C1F-BF55 |
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K6X4008C1F-Q |
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K6X4008C1F-UF55 (ROHS) |
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