Product Summary
The IRFPG40PBF is a power MOSFET. It provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commericial-industrial applications where higher power levels preclude the use of TO-220 devices.
Parametrics
IRFPG40PBF absolute maximum ratings: (1)ID, continuous drain current: 4.3A; (2)IDM, pulsed drain current: 17A; (3)PD, power dissipation: 150W; (4)VGS, gate-to-source voltage: ±20V; (5)EAS, single pulse avalache energy: 490mJ; (6)IAR, avalanche current: 4.3A; (7)EAR, repetitive avalanche energy: 15mJ; (8)dv/dt, peak diode recovery dv/dt: 1.0V/ns; (9)Tj, Tstg, operating junction and storage temperature range: -55 to 150℃.
Features
IRFPG40PBF features: (1)dynamic dv/dt rating; (2)repetitive avalanche rated; (3)isolated contral mounting hole; (4)fast switching; (5)ease of paralleling; (6)simple drive requirements; (7)lead-free.
Diagrams
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![]() IRFPG40PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 1000V 4.3 Amp |
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![]() IRFP044N |
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![]() MOSFET N-CH 55V 53A TO-247AC |
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![]() IRFP044PBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 60V 57 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() IRFP048 |
![]() Vishay/Siliconix |
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