Product Summary
The IRF7493PBF is a Power MOSFET. The applications of the IRF7493PBF include High frequency DC-DC converters, Lead-Free.
Parametrics
IRF7493PBF absolute maximum ratings: (1)VDS Drain-to-Source Voltage: 80V; (2)VGS Gate-to-Source Voltage: ±20V; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 9.3A; (4)ID @ TC = 70℃ Continuous Drain Current, VGS @ 10V: 7.4A; (5)IDM Pulsed Drain Current: 74A; (6)PD @TC = 25℃ Maximum Power Dissipation: 2.5W; (7)PD @TC = 70℃ Maximum Power Dissipation: 1.6W; (8)Linear Derating Factor: 0.02W/℃; (9)TJ Operating Junction and TSTG Storage Temperature Range: -55℃ to +150℃.
Features
IRF7493PBF features: (1) Low Gate-to-Drain Charge to Reduce Switching Losses; (2) Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001); (3) Fully Characterized Avalanche Voltage and Current.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF7493PBF |
International Rectifier |
MOSFET |
Data Sheet |
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