(China (Mainland))
Product Summary
The IRF7452PBF is a HEXFET Power MOSFET for high frequency DC-DC converters with synchronous rectification.
Parametrics
IRF7452PBF absolute maximum ratings: (1)VGS, Gate-to-Source Voltage: ±30 V max; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ 10V: 4.5A max; (4)ID @ TA = 70℃, Continuous Drain Current, VGS @ 10V: 3.6A max; (5)IDM, Pulsed Drain Current: 36A max; (6)PD @TA = 25℃, Maximum Power Dissipation: 2.5 W max; (7)PD @TA = 70℃ Maximum Power Dissipation: 1.6 W max; Linear Derating Factor: 0.02 W/℃ max; (8)TJ , TSTG, Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
IRF7452PBF features: (1)Low Charge and Low Gate Impedance to Reduce Switching Losses; (2)Fully Characterized Avalanche Voltage and Current.
Diagrams
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 IRF7452PBF |
International Rectifier |
MOSFET |
Data Sheet |
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