Product Summary
The SPP20N65C3 is a Power Transistor.
Parametrics
SPP20N65C3 absolute maximum ratings: (1)Continuous drain current, ID: 20.7A; (2)Pulsed drain current, tp limited by Tjmax, ID puls: 62.1 A; (3)Avalanche energy, single pulse, EAS: 690 mJ; (4)Avalanche energy, repetitive tAR limited by Tjmax, EAR: 1mJ; (5)Avalanche current, repetitive tAR limited by Tjmax, IAR: 7 A; (6)Gate source voltage, VGS: ±20V; (7)Gate source voltage AC (f >1Hz), VGS: ±30V; (8)Power dissipation, Ptot: 208W; (9)Operating and storage temperature, Tj , Tstg: -55 to +150℃.
Features
SPP20N65C3 features: (1)New revolutionary high voltage technology; (2)Worldwide best RDS(on) in TO 220; (3)Ultra low gate charge; (4)Periodic avalanche rated; (5)Extreme dv/dt rated; (6)High peak current capability; (7)Improved transconductance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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SPP20N65C3 |
Infineon Technologies |
MOSFET COOL MOS N-CH 650V 20.7 |
Data Sheet |
Negotiable |
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SPP20N65C3XKSA1 |
Infineon Technologies |
MOSFET |
Data Sheet |
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