Product Summary
The BAS21U is a Silicon Switching Diode.
Parametrics
BAS21U absolute maximum ratings: (1)Diode reverse voltage VR: 200 V; (2)Peak reverse voltage VRM: 250V; (3)Forward current IF: 250 mA; (4)Peak forward current IFM: 625mA; (5)Surge forward current, IFS: 4 A; (6)Total power dissipation, Ptot: 250mW; (7)Junction temperature Tj: 150℃; (8)Storage temperature Tstg: -65 to 150℃.
Features
BAS21U features: (1)Silicon Switching Diode; (2)For high-speed switching applications; (3)High breakdown voltage.
Diagrams
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![]() BAS20 |
![]() Taiwan Semiconductor |
![]() Diodes (General Purpose, Power, Switching) Switching diode 250 mW |
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![]() BAS20 /T3 |
![]() NXP Semiconductors |
![]() Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
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![]() Negotiable |
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![]() BAS20 T/R |
![]() NXP Semiconductors |
![]() Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
![]() Data Sheet |
![]() Negotiable |
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![]() BAS20,215 |
![]() NXP Semiconductors |
![]() Diodes (General Purpose, Power, Switching) DIODE SW TAPE-7 |
![]() Data Sheet |
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![]() BAS20,235 |
![]() NXP Semiconductors |
![]() Diodes (General Purpose, Power, Switching) DIODE SW TAPE-11 |
![]() Data Sheet |
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![]() BAS20_Q |
![]() Fairchild Semiconductor |
![]() Rectifiers 200V 200mA |
![]() Data Sheet |
![]() Negotiable |
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